Magnetoresistance effect device

ABSTRACT

A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. application Ser. No. 11/219,866filed on Sep. 7, 2005, which claims priority to Japanese Application No.2004-259280 filed on Sep. 7, 2004, the entire contents of which areincorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a magnetoresistance effect device and amethod of production of the same, more particularly relates to amagnetoresistance effect device fabricated utilizing a simple sputteringfilm-formation method and having an extremely high magnetoresistanceratio and a method of production of the same.

2. Description of the Related Art

In recent years, as nonvolatile memories, magnetic memory devices called“magnetoresistive random access memories (MRAMs)” have come intoattention and have started entering the commercial stage. MRAMs aresimple in structure, so ultra-high density integration to the gigabitlevel is easy. In MRAMs, the relative orientation of the magnetic momentis utilized to create the storage action. As the result, the number ofpossible re-writability is extremely high and the operating speed can bereduced to the nanosecond level.

FIG. 4 shows the structure of the MRAM. In the MRAM 101, 102 is a memorydevice, 103 a word line, and 104 a bit line. The large number of memorydevices 102 are arranged at intersecting positions of the plurality ofword lines 103 and plurality of bit lines 104 and are arranged in alattice-like positional relationship. Each of the large number of memorydevices 102 stores 1 bit of information.

Each memory device 102 of the MRAM 101, as shown in FIG. 5, is comprisedof a magnetoresistance effect device for storing 1 bit of information,that is, a tunneling magnetoresistance (TMR) device 110, and atransistor 106 having a switching function at the intersecting positionof the word line 103 and bit line 104. The main element in the memorydevice 102 is the TMR device 110. The basic structure of the TMR device,as shown in FIG. 6, is a three-layer structure comprised of a bottomferromagnetic metal electrode (bottom ferromagnetic layer) 107/tunnelbarrier layer 108/top ferromagnetic metal electrode (top ferromagneticlayer) 109. The TMR device 110 is therefore comprised of a pair offerromagnetic layers 107 and 109 and a tunnel barrier layer 108positioned between them.

In the TMR device 110, as shown in FIG. 6, the required voltage isapplied across the ferromagnetic layers 107 and 109 at the two sides ofthe tunnel barrier layer 108 to cause the flow of a predeterminedcurrent. In that state, an external magnetic field is applied. When thedirections of magnetization of the ferromagnetic layers 107 and 109 areparallel and the same (called the “parallel state”), the electricalresistance of the TMR device becomes the minimum ((A) state: resistancevalue R_(P)), while when the directions of magnetization of theferromagnetic layers are parallel but opposite (called the“anti-parallel state”), the electrical resistance of the TMR devicebecomes the maximum ((B) state: resistance value R_(A)). Therefore, theTMR device 110 can take a parallel state and an anti-parallel stateinduced by an external magnetic field and store information as a changein resistance value.

To realize a practical gigabit class MRAM using the above TMR device,the difference between the resistance value R_(P) of the “parallelstate” and resistance value R_(A) of the “anti-parallel state” has to belarge. As the indicator, the magnetoresistance ratio (MR ratio) is used.The MR ratio is defined as “(R_(A)−R_(P))÷R_(P)”.

To raise the MR ratio, in the past, the electrode materials of theferromagnetic metal electrodes (ferromagnetic layers) have beenoptimized, the method of production of the tunnel barrier layers havebeen modified, etc. For example, Japanese Patent Publication (A) No.2003-304010 and Japanese Patent Publication (A) No. 2004-63592 proposeseveral optimum examples of use of Fe_(x)Co_(y)B_(z) etc. for thematerial of the ferromagnetic metal electrode.

The MR ratio of the TMR device disclosed in Japanese Patent Publication(A) No. 2003-304010 and Japanese Patent Publication (A) No. 2004-63592is lower than about 70%. Further improvement of the MR ratio isnecessary.

Further, recently, regarding a single crystal TMR thin film using an MgObarrier layer, there has been a report of using molecular beam epitaxy(MBE) and an ultra-high vacuum evaporation system to fabricate anFe/MgO/Fe single crystal TMR thin film and obtain an MR ratio of 88%(Yuasa, Shinji et al., “High Tunnel Magnetoresistance at RoomTemperature in Fully Epitaxial Fe/MgO/Tunnel Junctions due to CoherentSpin-Polarized Tunneling”, Nanoelectronic Institute, Japanese Journal ofApplied Physics, issued Apr. 2, 2004, Vol. 43, No. 4B, p. L588-L590).This TMR thin film has a completely epitaxial single crystal structure.

Fabrication of the single crystal TMR thin film used for the singlecrystal MgO barrier layer described in the above publication requiresuse of an expensive MgO single crystal substrate. Further, epitaxialgrowth of an Fe film by an expensive MBE device, formation of an MgOfilm by ultrahigh vacuum electron beam evaporation and othersophisticated film deposition technology are required. There is theproblem that the longer the film deposition time, the less suitable theprocess for mass production.

OBJECTS AND SUMMARY

An object of the present invention is to provide a magnetoresistanceeffect device having a high MR ratio, improving the mass producibility,and improving the practicality and a method of production of the same.

One embodiment of the magnetoresistance effect device and method ofproduction of the same according to the present invention are configuredas follows to achieve the above object.

This magnetoresistance effect device includes a multilayer structurecomprised of a pair of ferromagnetic layers and a barrier layerpositioned between them, wherein at least the part of at least one ofthe ferromagnetic layers contacting the barrier layer is amorphous, andthe barrier layer is an MgO layer having a single crystal or highlyoriented fiber-texture structure. Here, the fiber-texture structurecorresponds to assembly of poly-crystalline grains, in which the crystalstructure is continuous across the layer thickness. However, in thelongitudinal (in-plane) direction the grain boundaries can be observed.Highly oriented means that the crystallographic orientation in the filmthickness direction is very uniform, while there is no specificcrystallographic orientation in the plane direction. Preferably, the(001) crystal plane of MgO barrier layer lies parallel to theferromagnetic layer surface. Here, the MgO layer can be either singlecrystal or highly oriented fiber-texture structure.

According to above magnetoresistance effect device, since the barrierlayer has a single crystal or highly oriented fiber-texture structure,the flow of current between the ferromagnetic layers can be madestraight and the MR ratio can be made an extremely high value.

In the magnetoresistance effect device, preferably the MgO layer is asingle crystal layer formed by the sputtering method. However, an MgOlayer with highly oriented fiber-texture structure also yield excellentproperties. According to this configuration, the intermediate barrierlayer can be produced simply. This is suitable for mass production.

In the magnetoresistance effect device, preferably the MgO layer is asingle crystal layer formed using an MgO target and the sputteringmethod. The MgO layer can also be a highly oriented fiber-texturestructure.

In the magnetoresistance effect device, preferably the ferromagneticlayers are CoFeB layers.

The method of production of a magnetoresistance effect device is amethod of production of a magnetoresistance effect device including amultilayer structure comprised of a pair of ferromagnetic layers and abarrier layer positioned between them, comprising forming at least oneferromagnetic layer so that at least at least the part contacting thebarrier layer is amorphous and forming the barrier layer having a singlecrystal or highly oriented fiber-texture structure by using thesputtering method. Further, in the method of production of amagnetoresistance effect device, preferably the MgO layer is formed byRF magnetron sputtering using an MgO target.

According to the present invention, since the tunnel barrier layerforming the intermediate layer of the TMR device or othermagnetoresistance effect device is an MgO layer having a single crystalor highly oriented fiber-texture structure, the MR ratio can be madeextremely high. When using this as a memory device of an MRAM, a gigabitclass ultra-high integrated MRAM can be realized. Further, by formingthe a single crystal or highly oriented fiber-texture MgO layer by thesputtering method, it is possible to fabricate a magnetoresistanceeffect device suitable for mass production and having high practicalapplicability.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other objects and features of the present invention willbecome clearer from the following description of the preferredembodiments given with reference to the attached drawings, wherein:

FIG. 1 is a view of the structure of a magnetoresistance effect device(TMR device) according to an embodiment of the present invention,

FIG. 2 is a plan view of a system for fabricating a magnetoresistanceeffect device (TMR device) according to an embodiment of the presentinvention,

FIG. 3 is a graph of the pressure dependency of magnetic characteristicsof a magnetoresistance effect device (TMR device) according to anembodiment of the present invention,

FIG. 4 is a partial perspective view of the principal structure of anMRAM,

FIG. 5 is a view of the structure of a memory device of an MRAM, and

FIG. 6 is a view for explaining the characteristics of a TMR device.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Below, a preferred embodiment of the present invention will be explainedwith reference to the attached drawings.

FIG. 1 shows an example of the multilayer structure of amagnetoresistance effect device according to the present invention, inparticular shows the multilayer structure of a TMR device. According tothis TMR device 10, a substrate 11 is formed with a multilayer filmcomprised of for example nine layers forming the TMR device 10. In thisnine-layer multilayer film, magnetic films etc. are stacked from thebottommost first layer to the topmost ninth layer with “Ta”, “PtMn”,“70CoFe”, “Ru”, “CoFeB”, “MgO”, “CoFeB”, “Ta”, and “Ru” in that order.The first layer (Ta: tantalum) is an undercoat layer, while the secondlayer (PtMn) is an anti-ferromagnetic layer. The layers from the thirdlayer to the fifth layer (70 CoFe, Ru, CoFeB) form fixed magnetizationlayers. The substantive fixed magnetization layer is the fifth layerferromagnetic layer comprised of “CoFeB”. The sixth layer (MgO:magnesium oxide) is an insulating layer forming a tunnel barrier layer.The seventh layer (CoFeB) is a ferromagnetic layer forming a freemagnetization layer. The sixth layer (MgO) forms an intermediate layerbetween the pair of ferromagnetic layers (CoFeB) arranged at the top andbottom. The eighth layer (Ta: tantalum) and the ninth layer (Ru:ruthenium) form hard mask layers. The fixed magnetization layer (fifthlayer “CoFeB”), the tunnel barrier layer (sixth layer “MgO”), and freemagnetization layer (seventh layer “CoFeB”) form the TMR device part 12in the strict sense as a basic structure. The fixed magnetization layerfifth layer “CoFeB” and the free magnetization layer seventh layer“CoFeB” are known as amorphous ferromagnetic bodies in the as-depositedstate. The tunnel barrier layer constituted by the MgO layer is formedso as to have a a single crystal or highly oriented fiber-texturestructure across the thickness direction.

Note that, in FIG. 1, the figures in parentheses at the layers indicatethe thicknesses of the layers in units of “nm (nanometers)”. Thethicknesses are examples. The invention is not limited to them.

Next, referring to FIG. 2, a system and method for producing a TMRdevice 10 having the above multilayer structure will be explained. FIG.2 is a schematic plan view of a system for producing a TMR device 10.This system can produce a multilayer film including a plurality ofmagnetic fields and is a sputtering film-forming system for massproduction.

The magnetic multilayer film fabrication system 20 shown in FIG. 2 is acluster type system provided with a plurality of film-forming chambersusing the sputtering method. In this system 20, a transport chamber 22provided with not shown robot loaders at the center position. Thetransport chamber 22 of the magnetic multilayer film fabrication system20 is provided with two load/unload chambers 25 and 26 which load/unloadsubstrates (silicon substrates) 11. These load/unload chambers 25 and 26are used alternately to enable fabrication of a multilayer film with agood productivity.

In this magnetic multilayer film fabrication system 20, the transportchamber 22 is surrounded with, for example, three film-forming chambers27A, 27B, and 27C and one etching chamber 28. In the etching chamber 28,the required surface of a TMR device 10 is etched. At the interface witheach chamber, a gate valve 30 separating the two chambers and able toopen/close the passage between them is provided. Note that each chamberis also provided with a not shown evacuation mechanism, gas introductionmechanism, power supply mechanism, etc.

The film-forming chambers 27A, 27B, and 27C of the magnetic multilayerfilm fabrication system 20 use the sputtering method to deposit theabove-mentioned magnetic films on the substrate 11 successively from thebottom. For example, the ceilings of the film-forming chambers 27A, 27B,and 27C are provided with four or five targets (31, 32, 33, 34, 35),(41, 42, 43, 44, 45), and (51, 52, 53, 54) arranged on suitablecircumferences. Substrate holders positioned coaxially with thecircumferences carry substrates on them.

In the above explanation, for example, the target 31 is made of “Ta”,while the target 33 is made of “CoFeB”. Further, the target 41 is madeof “PtMn”, the target 42 is made of “CoFe”, and the target 43 is made of“Ru”. Further, the target 51 is made of “MgO”.

The above plurality of targets are provided suitably inclined so as tosuitably face the substrate so as to efficiently deposit magnetic filmsof suitable formulations, but they may also be provided in statesparallel to the substrate surface. Further, they are arranged to enablethe plurality of targets and the substrate to relatively rotate. In thesystem 20 having this configuration, the film-forming chambers 27A, 27B,and 27C are utilized to successively form films of the magneticmultilayer film shown in FIG. 1 on the substrate 11 by the sputteringmethod.

The film-forming conditions of the TMR device part 12 forming theportion of the main elements of the present invention will be explained.The fixed magnetization layer (fifth layer “CoFeB”) is formed using aCoFeB 60/20/20 at % target at an Ar pressure of 0.03 Pa, a magnetron DCsputtering, and a sputtering rate of 0.64 Å/sec. Next, the tunnelbarrier layer (sixth layer “MgO”) is formed using a MgO 50/50 at %target, a sputter gas of Ar, and a pressure changed in the range of 0.01to 0.4 Pa. Magnetron RF sputtering is used to form the film at asputtering rate of 0.14 Å/sec. Next, the free magnetization layer(seventh layer “CoFeB”) is formed under the same film-forming conditionsas the fixed magnetization layer (fifth layer “CoFeB”).

In this embodiment, the film-forming speed of the MgO film was 0.14Å/sec, but the film may also be formed at a speed in the range of 0.01to 1.0 Å/sec.

The TMR device 10 finished being formed with films by sputtering in thefilm-forming chambers 27A, 27B, and 27C is annealed in a heat treatmentoven. At this time, the annealing temperature is for example about 300°C. The annealing is performed in a magnetic field of for example 8 kOe(632 kA/m) for example for 4 hours. Due to this, the PtMn of the secondlayer of the TMR device 10 is given the required magnetizationalignment.

FIG. 3 shows the results of measurement of the magnetic characteristicsof MgO. A high MR ratio is obtained over the entire measured range. Inparticular, in the region of a pressure of 0.05 Pa to 0.2 Pa, a high MRratio was obtained. In the region of a pressure of 0.05 Pa or more, thepressure on the substrate increases and the ion impact falls believedresulting in a reduction in film defects. With a pressure of 0.05 Pa ormore, the MR ratio increases and the tunnel resistance value (R_(A))increases. This is believed to be due to formation of a good singlecrystal or highly oriented fiber-texture film and as a result theleakage current of the film is decreased. On the other hand, in theregion of 0.05 Pa or less, the tunnel resistance value (R_(A)) falls andthe MR ratio also falls. This is believed to be because the ion impactincreases—resulting in an increase in defects of the MgO film. Across-section of a sample was observed by a transmission electronmicroscope (TEM). As a result, it was observed that, over the entirerange of the measured pressure, the MgO film had a single crystal orhighly oriented fiber-texture structure over the entire layer from thebottom interface to the top interface and that the (001) plane of theMgO single crystal or highly oriented fiber-texture was orientedparallel to the interfaces. Further, it was observed that the CoFeBlayer was formed in an amorphous state prior to annealing.

This sample was formed by sandwiching the two sides of the MgO layerwith ferromagnetic layers of amorphous CoFeB. But even if only one ofthe ferromagnetic layers was amorphous CoFeB, similar results areobserved. Preferably, during deposition of MgO layer the bottomferromagnetic layer was amorphous. Although the CoFeB ferromagneticlayers were initially amorphous prior to annealing, the CoFeBferromagnetic layers became crystallized or partly crystallized whensubjected to annealing at temperature higher than 300° C. for a fewhours. In this case, the MgO layer, sandwiched with crystallized CoFeBferromagnetic layers, showed a single crystal or highly-oriented fibertexture with the (001) crystal plane of MgO barrier layer lies parallelto the ferromagnetic layer surface. Compared with the samples annealedat 300° C., the samples annealed at higher temperature did not showdegradation of magnetic and magnetoresistance properties (MR ratio,R_(A) etc.).

On the other hand, when forming CoFe having a polycrystalline structureas the ferromagnetic layer at the two sides of the MgO layer, a largenumber of dislocations are seen in the MgO layer, a good single crystalor highly oriented fiber-texture film cannot be obtained, and themagnetoresistance characteristics are low.

At this time, as explained above, an MgO target 51 was used as thetarget. Preferably, the RF (high frequency) magnetron sputtering methodwas used. Note that the reactive sputtering method may also be used tosputter the Mg target by a mixed gas of Ar and O₂ and form an MgO film.

Note that above, the MgO layer is a single crystal or highly orientedfiber-texture throughout the layer and has a single crystal or highlyoriented fiber-texture structure with an (001) plane oriented parallelto the interfaces. Further, the pair of ferromagnetic layers forming theTMR device part 12 may also be, instead of the CoFeB having an amorphousstate, CoFeTaZr, CoTaZr, CoFeNbZr, CoFeZr, FeTaC, FeTaN, FeC, or otherferromagnetic layers having an amorphous state.

The configurations, shapes, sizes (thicknesses), and layouts explainedin the above embodiments are only shown schematically to an extentenabling the present invention to be understood and worked. Further, thenumerical values and compositions (materials) are only shown forillustration. Therefore, the present invention is not limited to theexplained embodiments and can be changed in various ways within thescope of the technical idea shown in the claims.

The present invention contains subject matter related to Japanese PatentApplication No. 2004-259280 filed on filed in the Japan Patent Office onSep. 7, 2004, the entire contents of which being incorporated herein byreference.

1. A magnetoresistance effect device including a multilayer structurecomprised of a pair of ferromagnetic layers and a barrier layerpositioned between them, wherein at least a part of at least one of saidferromagnetic layers contacting said barrier layer is amorphous, andsaid barrier layer is an MgO layer having a single crystal structure. 2.A magnetoresistance effect device including a multilayer structurecomprised of a pair of ferromagnetic layers and a barrier layerpositioned between them, wherein at least a part of at least one of saidferromagnetic layers contacting said barrier layer is amorphous, andsaid barrier layer is an MgO layer having a highly orientedfiber-texture structure.
 3. The magnetoresistance effect device as setforth in claim 1, wherein said MgO layer is a single crystal layerformed by a sputtering method.
 4. The magnetoresistance effect device asset forth in claim 2, wherein said MgO layer is a highly orientedfiber-texture layer formed by a sputtering method.
 5. Themagnetoresistance effect device as set forth in claim 3, wherein saidMgO layer is a single crystal layer formed using an MgO target and asputtering method.
 6. The magnetoresistance effect device as set forthin claim 4, wherein said MgO layer is a a highly oriented fiber-texturelayer formed using an MgO target and a sputtering method.
 7. Themagnetoresistance effect device as set forth in claim 1, wherein saidferromagnetic layers are CoFeB layers.
 8. The magnetoresistance effectdevice as set forth in claim 2, wherein said ferromagnetic layers areCoFeB layers.
 9. A magnetoresistance effect device comprising: a barrierlayer having fiber-texture with a crystal, and a first and secondferromagnetic layers positioned at both sides of said barrier layer. 10.The magnetoresistance effect device as set forth in claim 9, whereinsaid barrier layer includes Mg an O.
 11. The magnetoresistance effectdevice as set forth in claim 10, wherein both or either of said firstand second ferromagnetic layers includes CoFeB.